US 12,456,665 B2
Resin-sealed semiconductor device and method for manufacturing resin-sealed semiconductor device
Ryuichi Ishii, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Aug. 11, 2022, as Appl. No. 17/886,002.
Claims priority of application No. 2021-179156 (JP), filed on Nov. 2, 2021.
Prior Publication US 2023/0132513 A1, May 4, 2023
Int. Cl. H01L 23/495 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01)
CPC H01L 23/49548 (2013.01) [H01L 21/56 (2013.01); H01L 23/3121 (2013.01); H01L 23/49513 (2013.01); H01L 23/49537 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 24/26 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 2224/26175 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32057 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/3303 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/83815 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A resin-sealed semiconductor device comprising:
a semiconductor element;
a heat spreader to which a first surface of the semiconductor element is joined via a first joining material;
a first lead frame joined to a surface of the heat spreader on which the semiconductor element is joined;
a second lead frame joined to a second surface of the semiconductor element via a second joining material; and
mold resin sealing the first lead frame, the second lead frame, the semiconductor element, and the heat spreader together, such that a part of the first lead frame and a part of the second lead frame are exposed, wherein
the second lead frame has, on a surface thereof facing the semiconductor element and that the second joining material contacts,
a protrusion to regulate a thickness of the second joining material, and
a groove formed into the surface of the second lead frame facing the semiconductor element and at a peripheral part of the second joining material to receive the second joining material or a surplus of the second joining material.