US 12,456,664 B2
Semiconductor device with thermal dissipation and method therefor
Frank.zy Guo, Kaohsiung (TW); Yi-Tien Liao, Kaohsiung (TW); and Sam Lai, Kaosiung (TW)
Assigned to NXP B.V., Eindhoven (NL)
Filed by NXP B.V., Eindhoven (NL)
Filed on Oct. 19, 2022, as Appl. No. 18/047,670.
Prior Publication US 2024/0136256 A1, Apr. 25, 2024
Prior Publication US 2024/0234258 A9, Jul. 11, 2024
Int. Cl. H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/36 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/49513 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4871 (2013.01); H01L 21/4889 (2013.01); H01L 21/56 (2013.01); H01L 23/3157 (2013.01); H01L 23/36 (2013.01); H01L 23/4952 (2013.01); H01L 23/49838 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48149 (2013.01); H01L 2924/182 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
attaching a first die pad of a semiconductor die to a central pad of a package leadframe, the first die pad located in a central region on an active side of the semiconductor die;
connecting, by way of a first bond wire, a second die pad of the semiconductor die with a lead of the package lead frame, the second die pad located in a periphery region on the active side of the semiconductor die; and
encapsulating with an encapsulant a portion of the semiconductor die and a portion of the package leadframe, a backside surface of the semiconductor die exposed at a top major surface of the encapsulant, and a backside surface of the central pad exposed at a bottom major surface of the encapsulant.