US 12,456,651 B2
Semiconductor die forming and packaging method using ultrashort pulse laser micromachining
Jin Won Jeong, Seoul (KR); Jae Sik Choi, Cheongju-si (KR); and Byeung Soo Song, Sejong-si (KR)
Assigned to MagnaChip Semiconductor, Ltd., Cheongju-si (KR)
Filed by MagnaChip Semiconductor, Ltd., Cheongju-si (KR)
Filed on Apr. 15, 2021, as Appl. No. 17/231,074.
Claims priority of application No. 10-2020-0078137 (KR), filed on Jun. 26, 2020.
Prior Publication US 2021/0407854 A1, Dec. 30, 2021
Int. Cl. H01L 21/78 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/78 (2013.01) [H01L 21/268 (2013.01); H01L 21/3043 (2013.01); H01L 21/67092 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor die, the method comprising:
providing a substrate;
forming a first interlayer dielectric layer on the substrate, the first interlayer dielectric layer being a low-k dielectric layer;
forming a metal wire on the first interlayer dielectric layer;
forming a second interlayer dielectric layer on the metal wire;
forming a metal pad on the second interlayer dielectric layer;
forming a passivation dielectric layer on the metal pad;
patterning the passivation dielectric layer to expose the metal pad;
forming a metal bump on the exposed metal pad;
removing the patterned passivation dielectric layer adjacent to a scribe line region;
laser grooving the second interlayer dielectric layer and the low-k dielectric layer exposed by removing the patterned passivation dielectric layer from the scribe line region using an ultrashort pulse laser; and
cutting the substrate by mechanical sawing to form one or more semiconductor dies,
wherein the second interlayer dielectric layer is exposed by removing the patterned passivation dielectric layer adjacent to the scribe line region, and
wherein a light source of the ultrashort pulse laser directly irradiates the second interlayer dielectric layer to remove the second interlayer dielectric layer.