US 12,456,649 B2
Semiconductor device and methods of manufacturing thereof
Tsai-Ming Huang, Zhubei (TW); Wei-Chieh Huang, Zhudong Township (TW); Hsun-Chung Kuang, Hsinchu (TW); Yen-Chang Chu, Tainan (TW); Cheng-Che Chung, Hualien County (TW); Chin-Wei Liang, Zhubei (TW); Ching-Sen Kuo, Taipei (TW); Jieh-Jang Chen, Zhubei (TW); Feng-Jia Shiu, Jhudong Township (TW); and Sheng-Chau Chen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 28, 2021, as Appl. No. 17/360,784.
Application 17/360,784 is a continuation of application No. 16/584,594, filed on Sep. 26, 2019, granted, now 11,049,767.
Claims priority of provisional application 62/753,908, filed on Oct. 31, 2018.
Prior Publication US 2021/0327748 A1, Oct. 21, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 23/522 (2006.01); H01L 23/544 (2006.01)
CPC H01L 21/7684 (2013.01) [H01L 21/02074 (2013.01); H01L 21/31058 (2013.01); H01L 21/3212 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76883 (2013.01); H01L 23/5226 (2013.01); H01L 23/544 (2013.01); H01L 2221/1063 (2013.01); H01L 2223/54426 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an interlayer dielectric (ILD) layer disposed over the substrate;
a chemical mechanical polishing (CMP) stop layer formed on the ILD layer, the CMP stop layer being made of a different material than the ILD layer; and
a measurement mark comprising a metal layer disposed in a trench formed in the CMP stop layer and the ILD layer, wherein:
the metal layer has a U-shape cross section having a bottom part and sidewall parts,
a first angle between a plane parallel to an upper surface of the ILD CMP stop layer and a face of one of the sidewall parts of the metal layer is in a range from 50 degrees to 80 degrees,
a top surface of the one of the sidewall parts intersects the face of the one of the sidewall parts of the metal layer, and the top surface has a second angle with respect to the plane parallel to the upper surface of the CMP stop layer, and
the second angle is in a range from 5 degrees to 10 degrees.