| CPC H01L 21/6831 (2013.01) [H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01)] | 15 Claims |

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1. A pick-up structure for a memory device, comprising:
a substrate, having a memory cell region and a peripheral pick-up area adjacent to the memory cell area; and
a plurality of pick-up electrode strips, parallel to a first direction, extending along a second direction that is different from the first direction, and arranged on the substrate, wherein each of the pick-up electrode strips comprises:
a main part, deposited in the peripheral pick-up area, wherein the main part is defined by a plurality of fork-shaped patterns in a first mask layer; and
an extension part, extending from the main part to the memory cell region, wherein the extension part has a width less than a width of the main part and the extension part has a side wall surface aligned with a side wall surface of the main part;
wherein the first mask layer, a sacrificial material layer, and a second mask layer are sequentially formed on the substrate;
wherein a first pattern and a second pattern are formed in the second mask layer;
wherein the first pattern corresponds to the memory cell region and comprises a plurality of first strip patterns and a plurality of second strip patterns parallel with one another, and the second pattern corresponds to the peripheral pick-up region and comprises a plurality of fork-shaped patterns connected to the plurality of second strip patterns.
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