US 12,456,636 B2
Heat insulation structure, substrate processing apparatus, method of manufacturing semiconductor device and substrate processing method
Hironori Shimada, Toyama (JP); and Tomoshi Taniyama, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Dec. 16, 2021, as Appl. No. 17/553,582.
Application 17/553,582 is a continuation of application No. PCT/JP2019/025525, filed on Jun. 27, 2019.
Prior Publication US 2022/0108900 A1, Apr. 7, 2022
Int. Cl. H01L 21/67 (2006.01); C23C 16/46 (2006.01); F27B 17/00 (2006.01); F27D 1/00 (2006.01); F27D 5/00 (2006.01); H01L 21/324 (2006.01)
CPC H01L 21/67109 (2013.01) [C23C 16/46 (2013.01); F27B 17/0025 (2013.01); F27D 1/0033 (2013.01); F27D 5/0037 (2013.01); H01L 21/324 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A heat insulation structure arranged in a vicinity of a furnace opening of a heat treatment furnace wherein a temperature gradient is formed at the vicinity of the furnace opening, comprising:
a plurality of heat insulation plates with predetermined gaps therebetween,
wherein each heat insulation plate comprises:
a heat shield made of a metal; and
a seal constituted by a pair of sealing plates and made of quartz or ceramics, and configured to cover a front surface and a rear surface of the heat shield,
wherein the heat shield is arranged in a vacuum cavity provided in the seal, and
wherein the heat shield of each of the heat insulation plates is provided with at least one through-hole through which the front surface of the heat shield is in communication with the rear surface of the heat shield, and the pair of sealing plates are connected to each other at an entire circumference of each of the pair of sealing plates and in the at least one through-hole.