	US 12,456,631 B2
	Method of manufacturing semiconductor device
Hyungjun Jeon, Seoul (KR); Taeyeong Kim, Yongin-si (KR); Hoechul Kim, Seoul (KR); and Junhong Min, Ulsan (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 19, 2023, as Appl. No. 18/337,202.
Application 18/337,202 is a continuation of application No. 17/014,335, filed on Sep. 8, 2020, granted, now 11,721,562.
Claims priority of application No. 10-2019-0141901 (KR), filed on Nov. 7, 2019.
Prior Publication US 2023/0335415 A1, Oct. 19, 2023
Int. Cl. B32B 41/00 (2006.01); B32B 37/00 (2006.01); H01L 21/67 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01); H01L 25/00 (2006.01); H10F 39/00 (2025.01)

CPC H01L 21/67017 (2013.01) [B32B 37/003 (2013.01); B32B 37/0046 (2013.01); B32B 41/00 (2013.01); H01L 21/67092 (2013.01); H01L 24/74 (2013.01); B32B 2309/02 (2013.01); B32B 2309/12 (2013.01); B32B 2309/60 (2013.01); B32B 2457/14 (2013.01); H01L 21/6838 (2013.01); H01L 21/68742 (2013.01); H01L 25/50 (2013.01); H10F 39/018 (2025.01)]

20 Claims

1. A bonding method for bonding a first substrate to a second substrate, the bonding method comprising:

fixing the first substrate to a first surface of a first bonding chuck and fixing the second substrate to a second surface of a second bonding chuck, the second surface facing the first surface;

aligning the second bonding chuck with the first bonding chuck;

injecting a process gas in a space between the first substrate fixed to the first bonding chuck and the second substrate fixed to the second bonding chuck using a process gas injector surrounding the first surface of the first bonding chuck while injecting an air curtain forming gas to form an air curtain surrounding the first substrate and the second substrate using an air curtain generator; and

causing the first substrate fixed to the first bonding chuck to contact the second substrate fixed to the second bonding chuck to make a bonded substrate.