US 12,456,628 B2
Substrate processing method and substrate processing apparatus
Kenta Ono, Miyagi (JP); Shinya Ishikawa, Miyagi (JP); Tetsuya Nishizuka, Miyagi (JP); and Masanobu Honda, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 23, 2023, as Appl. No. 18/454,624.
Application 18/454,624 is a continuation of application No. PCT/JP2022/007605, filed on Feb. 24, 2022.
Claims priority of application No. 2021-027199 (JP), filed on Feb. 24, 2021.
Prior Publication US 2024/0047220 A1, Feb. 8, 2024
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/027 (2006.01); H01L 21/3065 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/3244 (2013.01); H01L 21/0274 (2013.01); H01L 21/3065 (2013.01); H01J 2237/334 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
providing a substrate, the substrate including a carbon-containing film, an intermediate film on the carbon-containing film, and a tin-containing film on the intermediate film, the tin-containing film having an opening pattern;
performing first etching, the first etching including etching the intermediate film using the tin-containing film as a mask to transfer the opening pattern to the intermediate film; and
performing second etching, the second etching using a plasma formed from a processing gas to remove the tin-containing film and etch the carbon-containing film using the intermediate film as a mask, the processing gas including hydrogen, halogen or carbon, and oxygen.