US 12,456,626 B2
Etching method and plasma processing apparatus
Fumiya Takata, Miyagi (JP); Shota Yoshimura, Miyagi (JP); and Shinya Morikita, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 29, 2022, as Appl. No. 17/955,540.
Claims priority of application No. 2021-161373 (JP), filed on Sep. 30, 2021.
Prior Publication US 2023/0086580 A1, Mar. 23, 2023
Int. Cl. H01L 29/00 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/3065 (2013.01) [H01J 37/32091 (2013.01); H01L 21/02175 (2013.01); H01L 21/02252 (2013.01); H01L 21/67063 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An etching method comprising:
preparing a substrate including a first region containing a first material and a second region containing a second material different from the first material; and
etching the second region with a plasma generated from a processing gas containing a tungsten-containing gas and a carbon-containing gas,
wherein in the etching, a flow rate of the tungsten-containing gas is largest among all gases contained in the processing gas except for an inert gas.