US 12,456,624 B2
Semiconductor device and method for fabricating the same
Se Ra Hwang, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jul. 5, 2022, as Appl. No. 17/857,473.
Claims priority of application No. 10-2021-0179567 (KR), filed on Dec. 15, 2021.
Prior Publication US 2023/0187212 A1, Jun. 15, 2023
Int. Cl. H01L 21/30 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 12/00 (2023.01)
CPC H01L 21/3003 (2013.01) [H01L 21/76829 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/50 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a dielectric structure in which etch stop structures and low-k layers are alternately stacked over a substrate; and
a metal interconnection electrically connected to the substrate in the dielectric structure,
wherein each one of the etch stop structures includes:
a first etch stop layer which is a silicon-rich silicon nitride having a higher silicon content than silicon nitride (Si3N4); and
a second etch stop layer which is a silicon nitride containing carbon on the first etch stop layer.