US 12,456,623 B2
Replacement gate methods that include treating spacers to widen gate
Shu-Han Chen, Hsinchu (TW); Tsung-Ju Chen, Hsinchu (TW); Ta-Hsiang Kung, New Taipei (TW); Xiong-Fei Yu, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 12, 2024, as Appl. No. 18/411,197.
Application 17/377,839 is a division of application No. 16/460,363, filed on Jul. 2, 2019, granted, now 11,069,531, issued on Jul. 20, 2021.
Application 18/411,197 is a continuation of application No. 17/377,839, filed on Jul. 16, 2021, granted, now 11,908,695.
Claims priority of provisional application 62/753,166, filed on Oct. 31, 2018.
Prior Publication US 2024/0145250 A1, May 2, 2024
Int. Cl. H10D 30/01 (2025.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 64/62 (2025.01); H10D 64/66 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H01L 21/28141 (2013.01) [H01L 21/0234 (2013.01); H01L 21/28518 (2013.01); H01L 21/31055 (2013.01); H01L 21/31116 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/6211 (2025.01); H10D 30/6217 (2025.01); H10D 62/151 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 64/513 (2025.01); H10D 64/517 (2025.01); H10D 64/62 (2025.01); H10D 64/671 (2025.01); H10D 84/0142 (2025.01); H10D 84/0147 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a first source/drain region and a second source/drain region over a substrate;
a gate structure over the substrate between the first source/drain region and the second source/drain region, wherein the gate structure comprises one or more gate dielectric layers and one or more gate electrode layers; and
a plurality of spacers along a first sidewall of the gate structure, wherein a width of each spacer of the plurality of spacers increases as each spacer approaches the substrate.