US 12,456,622 B2
Formation of an array of nanostructures
Dmitry Suyatin, Lund (SE); Amin Karimi, Lund (SE); Reza Jafari Jam, Lund (SE); Yoana Ilarionova, Lund (SE); Asif Muhammad, Lund (SE); and Jonas Sundqvist, Lund (SE)
Assigned to AlixLabs AB, Lund (SE)
Filed by AlixLabs AB, Lund (SE)
Filed on Apr. 28, 2025, as Appl. No. 19/191,370.
Application 19/191,370 is a continuation of application No. 18/957,406, filed on Nov. 22, 2024.
Application 18/957,406 is a continuation of application No. PCT/EP2024/054786, filed on Feb. 26, 2024.
Claims priority of application No. 23159155 (EP), filed on Feb. 28, 2023.
Prior Publication US 2025/0259846 A1, Aug. 14, 2025
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01)
CPC H01L 21/0337 (2013.01) 10 Claims
OG exemplary drawing
 
1. A method for forming an array of nanostructures, the method comprising the following steps:
providing a layer structure including an array of first sacrificial nanostructures arranged on a supporting layer structure comprising at least a first material layer and a substrate;
selectively applying spacer structures on sidewalls of the array of first sacrificial nanostructures;
selectively etching away the array of first sacrificial nanostructures such that the spacer structures form an array of second sacrificial nanostructures;
etching the first material layer using the array of second sacrificial nanostructures as an etching mask; and
removing the array of second sacrificial nanostructures thereby exposing an array of nanostructures formed from the first material layer,
wherein selectively applying spacer structures on the sidewalls of the array of first sacrificial nanostructures comprises a cyclic modification process where each cycle comprises:
isotropic modification of exposed surfaces of the array of first sacrificial nanostructures and of the first material layer, and
anisotropic etching of modified material from top surfaces of the first material layer and the first sacrificial nanostructures,
thereby gradually forming the spacer structures on the sidewalls of the array of first sacrificial nanostructures.