US 12,456,620 B2
Film-forming method
Shuji Azumo, Nirasaki (JP); Masahito Sugiura, Nirasaki (JP); Takashi Matsumoto, Nirasaki (JP); Yumiko Kawano, Nirasaki (JP); Shinichi Ike, Nirasaki (JP); and Kenji Ouchi, Nirasaki (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Appl. No. 17/762,230
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Sep. 16, 2020, PCT No. PCT/JP2020/035097
§ 371(c)(1), (2) Date Nov. 10, 2022,
PCT Pub. No. WO2021/060110, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 2019-173471 (JP), filed on Sep. 24, 2019.
Prior Publication US 2023/0148162 A1, May 11, 2023
Int. Cl. H01L 21/027 (2006.01); B82Y 30/00 (2011.01); C23C 16/04 (2006.01); C23C 16/06 (2006.01); C23C 16/30 (2006.01)
CPC H01L 21/0271 (2013.01) [B82Y 30/00 (2013.01); C23C 16/042 (2013.01); C23C 16/06 (2013.01); C23C 16/30 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A film forming method of forming a target film on a substrate, the film forming method comprising:
preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region;
forming carbon nanotubes on a surface of the layer of the first conductive material; and
supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.