| CPC H01J 37/32706 (2013.01) [H01J 37/32146 (2013.01); H01J 37/32715 (2013.01); H01J 37/32935 (2013.01); H01J 37/3299 (2013.01); H01J 2237/334 (2013.01)] | 13 Claims |

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1. A plasma processing system, comprising:
a substrate support defining a surface for supporting a substrate to be processed, the substrate support including an electrostatic chuck comprising a chucking pole, and an electrode, wherein the electrode and the chucking pole are disposed in a layer of dielectric material and are separated from the substrate support surface by respective portions of the layer of dielectric material;
a plasma, disposed above the substrate support surface;
a sensor capturing a signal representative of a voltage at a substrate positioned
on the substrate support surface;
a bias supply providing a shaped pulse bias waveform to the chucking pole;
a controller receiving the captured signal from the sensor and generating a control signal to be communicated to the bias supply to adjust the shaped pulse bias waveform based on the captured signal; and
wherein the chucking pole is located in the layer of dielectric material such that a thickness of a portion of the layer of dielectric material between the chucking pole and the substrate support surface is at least ten times less than a thickness of a portion of the layer of dielectric material between the electrode and the substrate support surface.
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