US 12,456,605 B2
Plasma processing apparatus and plasma processing method
Takahiro Shindo, Yamanashi (JP); Seiichi Okamoto, Yamanashi (JP); Hiroshi Otomo, Yamanashi (JP); Takamichi Kikuchi, Yamanashi (JP); Tatsuo Matsudo, Yamanashi (JP); Yasushi Morita, Yamanashi (JP); and Takashi Sakuma, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Jul. 13, 2021, as Appl. No. 17/374,671.
Claims priority of application No. 2020-120879 (JP), filed on Jul. 14, 2020; and application No. 2021-007232 (JP), filed on Jan. 20, 2021.
Prior Publication US 2022/0020568 A1, Jan. 20, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01)
CPC H01J 37/32174 (2013.01) [H01J 37/32146 (2013.01); H01J 37/3244 (2013.01); H01J 37/32568 (2013.01); H01L 21/31138 (2013.01); H01L 21/32051 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A plasma processing apparatus for performing plasma processing on a substrate, comprising:
a processing chamber;
a substrate support on which the substrate is placed, the substrate support being disposed in the processing chamber;
a lower electrode provided in the substrate support, the lower electrode being grounded;
an upper electrode disposed to face the lower electrode;
a gas supply source to supply a processing gas to a space between the upper electrode and the substrate support;
a radio frequency power supply to apply RF power to the upper electrode to generate plasma of the processing gas;
a matcher matching a load impedance with an internal impedance of the RF power supply, the matcher connected downstream of the RF power supply; and
a voltage waveform shaping processor provided between the matcher and the upper electrode to shape a voltage waveform of the RF power supply to suppress a positive voltage of an RF voltage applied to the upper electrode,
wherein the voltage waveform shaping processor includes:
a capacitor that is disposed, downstream of the matcher, in a power supply line of the RF power supply, and
a ground circuit that includes a first diode, the ground circuit being branched downstream of the capacitor in the power supply line and grounded through the first diode.