US 12,456,603 B2
Substrate processing apparatus, signal source device, method of processing material layer, and method of fabricating semiconductor device
Sung-gil Kang, Hwaseong-si (KR); Min-seop Park, Hwaseong-si (KR); Gon-jun Kim, Suwon-si (KR); Jae-jik Baek, Seongnam-si (KR); Jae-jin Shin, Seoul (KR); and In-hye Jeong, Changnyeong-gun (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 28, 2022, as Appl. No. 18/089,691.
Application 18/089,691 is a division of application No. 16/448,450, filed on Jun. 21, 2019, granted, now 11,569,065.
Claims priority of application No. 10-2018-0071602 (KR), filed on Jun. 21, 2018.
Prior Publication US 2023/0147992 A1, May 11, 2023
Int. Cl. H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC H01J 37/32128 (2013.01) [H01J 37/32357 (2013.01); H01L 21/02071 (2013.01); H01L 21/02595 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01); H01L 21/67028 (2013.01); H01J 2237/3341 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of processing a material layer, the method comprising:
positioning a substrate comprising a polycrystalline material layer on a susceptor in a processing chamber;
converting an upper portion of the polycrystalline material layer into an amorphous material layer; and
removing the amorphous material layer by using radicals,
wherein the converting of the upper portion of the polycrystalline material layer into the amorphous material layer comprises:
supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor to provide radicals and ions to the upper portion of the polycrystalline material layer.