US 12,456,535 B2
Non-volatile memory with efficient setting of initial program voltage
Wei Cao, Fremont, CA (US); Jiahui Yuan, Fremont, CA (US); and Xiang Yang, Santa Clara, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by Sandisk Technologies, Inc., Milpitas, CA (US)
Filed on Mar. 6, 2024, as Appl. No. 18/596,936.
Prior Publication US 2025/0285700 A1, Sep. 11, 2025
Int. Cl. G11C 29/12 (2006.01)
CPC G11C 29/1201 (2013.01) [G11C 29/12005 (2013.01); G11C 2029/1202 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A non-volatile storage apparatus, comprising:
a non-volatile memory comprising a plurality of non-volatile memory cells and word lines connected to the plurality of non-volatile memory cells, the plurality of non-volatile memory cells include a first group of non-volatile memory cells and a second group of non-volatile memory cells; and
a control circuit connected to the plurality of non-volatile memory cells, the control circuit is configured to:
apply a first set of doses of programming to a word line connected to the first group of non-volatile memory cells in order to program the first group of non-volatile memory cells, the first set of doses of programming has a first initial voltage magnitude,
between an adjacent pair of doses of programming of the first set of doses: apply a first test voltage to the word line connected to the first group of non-volatile memory cells to determine a number of memory cells of the first group in a first condition followed by applying a second test voltage to the word line connected to the first group of non-volatile memory cells to determine a number of memory cells of the first group in a second condition without applying a voltage spike on the word line connected to the first group of non-volatile memory cells in a time period between the applying the first test voltage and the applying the second test voltage,
apply a second set of doses of programming to a word line connected to the second group of non-volatile memory cells in order to program the second group of non-volatile memory cells, the second set of doses of programming includes a second initial voltage magnitude, and
prior to applying the second set of doses of programming, set the second initial voltage magnitude based on the number of memory cells of the first group in the first condition and the number of memory cells of the first group in the second condition.