US 12,456,534 B2
Storage devices having enhanced error detection and memory cell repair
Dong Kim, Suwon-si (KR); and Inhoon Park, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 14, 2023, as Appl. No. 18/508,903.
Claims priority of application No. 10-2023-0011191 (KR), filed on Jan. 27, 2023.
Prior Publication US 2024/0257889 A1, Aug. 1, 2024
Int. Cl. G11C 29/02 (2006.01); G11C 29/00 (2006.01)
CPC G11C 29/022 (2013.01) [G11C 29/76 (2013.01); G11C 29/789 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device, comprising:
a volatile memory including a memory cell array, which has a plurality of sub-cell arrays therein, and a plurality of sub-wordline driver blocks, which are configured to drive sub-wordlines electrically connected to at least one of the plurality of sub-cell arrays; and
a storage controller configured to control the volatile memory, said storage controller comprising:
a volatile memory interface configured to transmit data to and receive data from the volatile memory, and detect an error bit(s) of data output from the volatile memory;
a working memory configured to store a structure map table, which maps unit areas of the volatile memory, the sub-wordlines, and the plurality of sub-wordline driver blocks; and
a processor configured to: update an error count of a unit area of the volatile memory that corresponds to the error bit(s) detected from the volatile memory interface to the structure map table, detect at least one of a defective sub-wordline and defective sub-wordline driver block, by accessing the structure map table, and then repair at least one memory cell connected to the defective sub-wordline and/or repair at least one memory cell associated with the defective sub-wordline driver block, in response to the detection of the at least one of a defective sub-wordline and defective sub-wordline driver block.