US 12,456,525 B2
Three-dimensional memory device
Yu-Hsuan Lin, Taichung (TW); and Yu-Yu Lin, New Taipei (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Feb. 7, 2024, as Appl. No. 18/435,030.
Prior Publication US 2025/0253000 A1, Aug. 7, 2025
Int. Cl. G11C 7/00 (2006.01); G06N 3/04 (2023.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01)
CPC G11C 16/26 (2013.01) [G06N 3/04 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) memory device, comprising:
a plurality of word lines;
a plurality of bit lines;
a 3D memory array, comprising a plurality of two-dimensional (2D) memory arrays, and configured to store a first neural network data, a second neural network data, a third neural network data and a fourth neural network data related to at least one neural network model,
wherein each of the plurality of 2D memory arrays is coupled to the plurality of word lines and the plurality of bit lines, configured to receive a first input voltage and output a first output current, and configured to receive a second input voltage and output a second output current;
a plurality of encoding circuits, respectively coupled to the plurality of 2D memory arrays, and configured to generate the first input voltage and the second input voltage respectively based on the first neural network data and the second neural network data; and
a plurality of sensing circuits, respectively coupled to the plurality of 2D memory arrays, and configured to generate the third neural network data and the fourth neural network data respectively based on the first output current and the second output current.