US 12,456,524 B2
Memory device, operating method thereof, and verification result generator
Hyung Jin Choi, Icheon-si (KR); and Chan Sik Park, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on May 17, 2023, as Appl. No. 18/319,292.
Claims priority of application No. 10-2022-0163010 (KR), filed on Nov. 29, 2022.
Prior Publication US 2024/0177779 A1, May 30, 2024
Int. Cl. G11C 7/00 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 16/24 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory cell array including a plurality of memory cells;
a peripheral circuit including a plurality of page buffers respectively connected to the plurality of memory cells through a plurality of bit lines;
a sensing circuit connected to the plurality of page buffers respectively through a plurality of sensing lines, the sensing circuit:
performing a sensing operation on the page buffers in units of a plurality of chunks, each chunk including two or more page buffers, among the plurality of page buffers, and
outputting a sensing result of each of the plurality of chunks;
a verification result output circuit configured to output a final verification result of a target program state, among a plurality of program states to which the memory cells are to be programmed, based on the sensing results of the plurality of chunks; and
a control logic configured to control the sensing circuit and the peripheral circuit based on the final verification result,
wherein the verification result output circuit is configured to output a final verification result representing that a verification on the target program state has passed when a sensing result of at least one chunk group, among a plurality of chunk groups, formed by classifying the plurality of chunks, represents pass.