| CPC G11C 16/102 (2013.01) [G11C 16/08 (2013.01); G11C 16/30 (2013.01)] | 20 Claims |
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1. A non-volatile memory device comprising:
a memory cell array including memory cells coupled to a plurality of word lines;
a boost circuit configured to receive an external power supply voltage and generate a boosted voltage based on the external power supply voltage;
a regulator configured to generate a regulated voltage based on the external power supply voltage; and
a control logic configured to control word line voltages provided to the plurality of word lines,
wherein the control logic performs a plurality of program loops in a program operation for the memory cell array, and
wherein the control logic provides an adjacent word line voltage to at least one adjacent word line that is adjacent to a selected word line, and
wherein, in a first section of the plurality of program loops, the control logic provides the regulated voltage as the adjacent word line voltage, and in a second section of the plurality of program loops, the control logic provides the boosted voltage as the adjacent word line voltage.
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