| CPC G11C 16/08 (2013.01) [G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/3427 (2013.01); G11C 16/3459 (2013.01)] | 14 Claims |
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1. A method of operating a memory device, comprising the steps of:
preparing a memory block that includes a plurality of memory cells that are arranged in a plurality of word lines, the plurality of word lines including a selected word line, a pair of neighboring word lines that are located immediately adjacent to the selected word line, and a plurality of non-neighboring word lines that are not immediately adjacent to the selected word line;
applying a reference voltage to the selected word line;
applying different first and second pass voltages to the pair of neighboring word lines, and applying a third pass voltage that is different than the first and second pass voltages to the non-neighboring word lines in the memory block;
performing a sensing operation on at least one memory cell in the selected word line;
wherein the first pass voltage is a VREADK_P1 voltage and the second pass voltage is a VREADK_E1 voltage and wherein the VREADK_P1 voltage is less than the VREADK_E1 voltage; and
wherein the VREADK_P1 voltage is applied to the one of the neighboring word lines that was programmed prior to the programming of the selected word line and the VREAK_E1 voltage is applied to the one of the neighboring word lines that was in an erased condition during programming of the selected word line.
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