US 12,456,516 B2
Method for operating memory cell and resistive random access memory, and electronic device
Xiaoxin Xu, Beijing (CN); Jie Yu, Beijing (CN); Danian Dong, Beijing (CN); Zhaoan Yu, Beijing (CN); and Hangbing Lv, Beijing (CN)
Assigned to Institute of Microelectronics, Chinese Academy of Sciences, Beijing (CN)
Appl. No. 18/029,198
Filed by Institute of Microelectronics, Chinese Academy of Sciences, Beijing (CN)
PCT Filed Jan. 25, 2021, PCT No. PCT/CN2021/073534
§ 371(c)(1), (2) Date Sep. 7, 2023,
PCT Pub. No. WO2022/068126, PCT Pub. Date Apr. 7, 2022.
Claims priority of application No. 202011069668.3 (CN), filed on Sep. 30, 2020.
Prior Publication US 2025/0266089 A1, Aug. 21, 2025
Int. Cl. G11C 13/00 (2006.01)
CPC G11C 13/0069 (2013.01) [G11C 13/0007 (2013.01); G11C 13/003 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/79 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method for operating a memory cell, the memory cell comprising: a resistive device; the method comprising: performing a writing operation on the resistive device, wherein the writing operation comprises:
applying a first voltage for writing on the resistive device;
determining whether a resistance value of the resistive device reaches a low resistance state threshold during a period of applying a writing voltage; and
applying a constant current to the resistive device in response to the resistance value of the resistive device reaching the low resistance state threshold, wherein a voltage value generated by the constant current on the resistive device is smaller than a voltage value of the first voltage,
wherein the method further comprises: performing an erasing operation on the resistive device, wherein the erasing operation comprises:
applying a second voltage for erasing on the resistive device;
determining whether a resistance value of the resistive device reaches a reference resistance value during a period of applying an erasing voltage; and
applying a constant voltage to the resistive device in response to the resistance value of the resistive device reaching the reference resistance value, wherein a voltage value of the constant voltage is smaller than a voltage value of the second voltage.