| CPC G11C 11/4087 (2013.01) [G11C 11/4076 (2013.01); G11C 11/4085 (2013.01); G11C 11/4093 (2013.01); H03K 19/20 (2013.01)] | 20 Claims |

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1. A memory circuit comprising:
a global control circuit configured to generate a first set of global pre-decoder signals, a second set of global pre-decoder signals and a first set of local address signals in response to a memory address signal and a first clock signal;
a first local control circuit coupled to the global control circuit, the first local control circuit comprising:
a first set of repeater circuits configured to generate a first set of local pre-decoder signals in response to the first set of global pre-decoder signals, and to generate a second set of local pre-decoder signals in response to the second set of global pre-decoder signals; and
a first clock pre-decoder circuit coupled to the global control circuit, and configured to generate a first set of clock signals and a second set of clock signals in response to the first set of local address signals and the first clock signal; and
a first set of word line post-decoder circuits coupled to the first clock pre-decoder circuit and the first set of repeater circuits, and configured to generate a first set of word line signals in response to the first set of clock signals, the first set of local pre-decoder signals and the second set of local pre-decoder signals.
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