US 12,456,502 B2
Generating semi-soft bit data during corrective read operations in memory devices
Phong Sy Nguyen, Livermore, CA (US); Patrick R. Khayat, San Diego, CA (US); Jeffrey S. McNeil, Nampa, ID (US); Dung Viet Nguyen, San Jose, CA (US); Kishore Kumar Muchherla, San Jose, CA (US); and James Fitzpatrick, Laguna Niguel, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 17, 2023, as Appl. No. 18/198,623.
Claims priority of provisional application 63/402,318, filed on Aug. 30, 2022.
Prior Publication US 2024/0071435 A1, Feb. 29, 2024
Int. Cl. G11C 7/00 (2006.01); G11C 7/10 (2006.01)
CPC G11C 7/1069 (2013.01) [G11C 7/1057 (2013.01); G11C 7/106 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory array comprising a plurality of memory cells, the plurality of memory cells comprising a set of target cells connected to a target wordline, wherein for each target cell of the set of target cells, a respective group of adjacent cells adjacent to the target cell comprises at least one cell connected to at least one wordline adjacent to the target wordline; and
control logic, operatively coupled with the memory array, to perform operations comprising:
causing a read operation to be initiated with respect to the set of target cells;
obtaining, for the respective group of adjacent cells, respective cell state information;
performing a set of strobe reads on the set of target cells;
identifying, by performing a lookup of a reference table, a first strobe read and a second strobe read, from the set of strobe reads, for generating semi-soft bit data based on the respective cell state information of the respective group of adjacent cells; and
generating, for a target cell of the set of target cells, the semi-soft bit data based on data obtained from the first strobe read and the second strobe read.