US 12,455,664 B2
Semiconductor device
Toshihiro Sato, Tokyo (JP); and Ryoichi Ito, Tokyo (JP)
Assigned to Magnolia White Corporation, Tokyo (JP)
Filed by Magnolia White Corporation, Tokyo (JP)
Filed on May 2, 2023, as Appl. No. 18/142,094.
Application 18/142,094 is a continuation of application No. 17/038,891, filed on Sep. 30, 2020, granted, now 11,669,213.
Application 17/038,891 is a continuation of application No. 16/197,548, filed on Nov. 21, 2018, granted, now 10,804,488, issued on Oct. 13, 2020.
Application 16/197,548 is a continuation of application No. 15/484,683, filed on Apr. 11, 2017, granted, now 10,170,727, issued on Jan. 1, 2019.
Application 15/484,683 is a continuation of application No. 14/469,634, filed on Aug. 27, 2014, granted, now 9,660,003, issued on May 23, 2017.
Claims priority of application No. 2013-179505 (JP), filed on Aug. 30, 2013.
Prior Publication US 2023/0266851 A1, Aug. 24, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G01R 27/26 (2006.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01); H10K 50/822 (2023.01); H10K 50/842 (2023.01); H10K 59/127 (2023.01); H10K 59/40 (2023.01); H10K 59/80 (2023.01)
CPC G06F 3/0445 (2019.05) [G06F 3/044 (2013.01); G06F 3/0446 (2019.05); H10K 50/822 (2023.02); H10K 50/8426 (2023.02); H10K 59/1275 (2023.02); H10K 59/40 (2023.02); H10K 59/8722 (2023.02); H10K 59/873 (2023.02); H10K 59/80521 (2023.02)] 3 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first substrate having an insulating surface;
a circuit using thin film transistors on the insulating surface, the circuit comprises organic elements, each of the organic elements comprises a first electrode and a second electrode;
a lead line on the insulating surface;
a connection terminal on the insulating surface, the connection terminal connected to the lead line;
a lower sealing layer on the circuit;
detection electrodes on the lower sealing layer, the detection electrodes comprise a first detection electrode layer and a second detection electrode layer;
a middle sealing layer is between the first detection electrode layer and the second detection electrode layer; and
an upper sealing layer covering the pair of detection electrodes, wherein
the first detection electrode layer is between the lower sealing layer and the middle sealing layer,
the second detection electrode layer is between the middle sealing layer and the upper sealing layer,
one of the detection electrodes is connected to the lead line at a contact portion, and
the contact portion is covered by the upper sealing layer.