US 12,455,511 B2
In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones
Daniel J. Fulford, Cohoes, NY (US); Anthony R. Schepis, Averill Park, NY (US); Mark I. Gardner, Cedar Creek, TX (US); H. Jim Fulford, Marianna, FL (US); and Anton J. DeVilliers, Clifton Park, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 17, 2022, as Appl. No. 17/889,460.
Claims priority of provisional application 63/306,588, filed on Feb. 4, 2022.
Prior Publication US 2023/0251584 A1, Aug. 10, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01)
CPC G03F 7/70783 (2013.01) [G03F 7/70483 (2013.01); H01L 21/3247 (2013.01); H01L 21/67103 (2013.01); H01L 21/67115 (2013.01); H01L 21/67288 (2013.01); H01L 22/20 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving a wafer having a working surface for one or more devices to be fabricated thereon, and a backside surface opposite to the working surface;
measuring the wafer to identify bow measurement of the wafer;
forming a first stress-modification film on the working surface of the wafer, the first stress-modification film reactive to heat such that applied heat modifies an internal stress of the first stress-modification film;
forming a second stress-modification film on the backside surface of the wafer, the second stress-modification film reactive to heat such that applied heat modifies an internal stress of the second stress-modification film;
applying a first pattern of heat onto the first stress-modification film to modify the internal stress of the first stress-modification film; and
applying a second pattern of heat onto the second stress-modification film to modify the internal stress of the second stress-modification film,
wherein the first and second patterns of heat correspond to the bow measurement of the wafer.