US 12,455,510 B2
Substrate processing apparatus and method of manufacturing semiconductor device using the same
Kyoungwhan Oh, Suwon-si (KR); Ho Young Kim, Seoul (KR); Sunghwan Kim, Suwon-si (KR); Jaekyung Park, Seoul (KR); Jaehong Lee, Suwon-si (KR); and Yohan Choe, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR); and Seoul National University R&DB Foundation, (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 8, 2024, as Appl. No. 18/436,127.
Claims priority of application No. 10-2023-0034590 (KR), filed on Mar. 16, 2023.
Prior Publication US 2024/0310739 A1, Sep. 19, 2024
Int. Cl. G03F 7/00 (2006.01); G03F 7/20 (2006.01)
CPC G03F 7/70725 (2013.01) [G03F 7/2043 (2013.01); G03F 7/70808 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate processing apparatus, comprising:
a substrate stage configured to support a semiconductor substrate, the substrate stage being rotatable at a predetermined angular velocity; and
a discharge device above the substrate stage, the discharge device being configured to discharge a chemical solution onto the semiconductor substrate, and the discharge device including:
a nozzle arm movable along a radial direction from a central region of the substrate stage to a peripheral region surrounding the central region,
a nozzle on the nozzle arm, the nozzle facing the substrate stage, and the nozzle being configured to discharge the chemical solution onto the semiconductor substrate at a predetermined angle relative to a surface of the semiconductor substrate, and
an angle changer configured to change the predetermined angle such that the predetermined angle gradually decreases as the nozzle arm moves from the central region to the peripheral region.