US 12,455,504 B2
Metalorganic films for extreme ultraviolet patterning
Robert Clark, Fremont, CA (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 19, 2022, as Appl. No. 17/748,686.
Claims priority of provisional application 63/192,893, filed on May 25, 2021.
Prior Publication US 2022/0382159 A1, Dec. 1, 2022
Int. Cl. G03F 7/20 (2006.01); G03F 7/004 (2006.01); G03F 7/16 (2006.01)
CPC G03F 7/2004 (2013.01) [G03F 7/0042 (2013.01); G03F 7/0044 (2013.01); G03F 7/167 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
forming, over the substrate placed in a process chamber, an extreme ultraviolet (EUV)-active photoresist film comprising a tin alkenoxide, a tin alkoxide, a tin aryloxide, or a tin carboxylate moiety, the forming comprising
exposing the substrate to a tin-containing precursor, and
exposing the substrate to an oxygen-containing precursor that reacts with tin from the tin-containing precursor to form the tin alkenoxide, the tin alkoxide, the tin aryloxide, or the tin carboxylate, wherein the tin-containing precursor and the oxygen-containing precursor comprise liquids;
incorporating a photoacid generator (PAG) into the EUV-active photoresist film, the PAG being formed from an aluminum (Al) precursor or a boron (B) precursor, and the PAG comprising aluminum fluoroalkoxide moieties, boron fluoroalkoxide moieties, or boron fluorophenoxide moieties; and
patterning the EUV-active photoresist film by exposing the substrate to an EUV irradiation.