US 12,455,501 B2
Blank mask and photomask using the same
GeonGon Lee, Seoul (KR); Suk Young Choi, Seoul (KR); Hyung-joo Lee, Seoul (KR); Sung Hoon Son, Seoul (KR); Seong Yoon Kim, Seoul (KR); Min Gyo Jeong, Seoul (KR); Taewan Kim, Seoul (KR); and Inkyun Shin, Seoul (KR)
Assigned to SK enpulse Co., Ltd., Pyeongtaek-si (KR)
Filed by SK enpulse Co., Ltd., Pyeongtaek-si (KR)
Filed on Aug. 30, 2022, as Appl. No. 17/898,749.
Claims priority of application No. 10-2021-0117417 (KR), filed on Sep. 3, 2021.
Prior Publication US 2023/0083755 A1, Mar. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/32 (2012.01); G03F 1/50 (2012.01); G03F 1/60 (2012.01)
CPC G03F 1/32 (2013.01) [G03F 1/50 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A blank mask comprising a transparent substrate and a light shielding film disposed on the transparent substrate,
wherein the light shielding film comprises a transition metal and at least one selected from the group consisting of oxygen and nitrogen,
wherein the light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer,
wherein an amount of the transition metal in the first light shielding layer is 35 to 55 at %,
wherein an amount of oxygen in the first light shielding layer is 23 to 33 at %,
wherein an amount of the transition metal in the second light shielding layer is greater than an amount of the transition metal in the first light shielding layer, and
wherein a surface of the light shielding film has a first contact angle of 40° to 45° measured by using diiodo-methane as a first liquid contacting the surface of the light shielding film.