US 12,455,259 B2
Semiconductor device and manufacturing method thereof
Wei Lee, Hsinchu (TW); Chung-Liang Cheng, Changhua County (TW); Pei-Wen Liu, Hsinchu (TW); Ke-Wei Su, Hsinchu County (TW); and Kuan-Lun Cheng, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 2, 2022, as Appl. No. 17/830,363.
Prior Publication US 2023/0393093 A1, Dec. 7, 2023
Int. Cl. G01N 27/414 (2006.01)
CPC G01N 27/4148 (2013.01) 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate, comprising devices disposed therein;
an interconnect, disposed on the substrate and electrically coupled to the devices, wherein the interconnect comprises a plurality of build-up layers and a through hole formed therein;
a first transistor, disposed in the interconnect and vertically extending through at least one of the plurality of build-up layers, the first transistor being electrically coupled to a first device of the devices through the interconnect;
a second transistor, disposed in the interconnect and vertically extending through the at least one of the plurality of build-up layers, the second transistor being electrically coupled to a second device of the devices through the interconnect, wherein the first transistor and the second transistor are laterally separated from one another through the through hole; and
a sensing film, disposed on the interconnect and further extending into the through hole, wherein the sensing film is laterally disposed between the first transistor and the second transistor.