US 12,455,228 B2
Semiconductor measurement apparatus
Garam Choi, Suwon-si (KR); Wookrae Kim, Suwon-si (KR); Jinseob Kim, Suwon-si (KR); Jinyong Kim, Suwon-si (KR); Sungho Jang, Suwon-si (KR); and Daehoon Han, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 16, 2023, as Appl. No. 18/154,990.
Claims priority of application No. 10-2022-0070451 (KR), filed on Jun. 10, 2022.
Prior Publication US 2023/0400404 A1, Dec. 14, 2023
Int. Cl. G01N 21/21 (2006.01); G01B 11/24 (2006.01)
CPC G01N 21/21 (2013.01) [G01B 11/24 (2013.01); G01B 2210/56 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor measurement apparatus, comprising:
an illumination unit including a light source and at least one illumination polarization element disposed on a path of light emitted by the light source;
a light receiving unit including at least one light-receiving polarization element disposed on a path of light passing through the at least one illumination polarization element and reflected by a sample, and an image sensor positioned to receive light passing through the at least one light-receiving polarization element and configured to output an original image; and
a control unit configured to determine, by processing the original image, a selected critical dimension among critical dimensions of a structure included in a region of the sample to which light is incident,
wherein the control unit is configured to obtain a plurality of sample images by selecting regions of the original image in which a peak due to interference appears, to determine a plurality of elements included in a Mueller matrix using the plurality of sample images, and to determine the selected critical dimension based on the plurality of elements.