US 12,454,768 B1
Hybrid seed structure for crystal growth system
Matthew Donofrio, Raleigh, NC (US)
Assigned to WOLFSPEED, INC., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Nov. 8, 2024, as Appl. No. 18/941,479.
Int. Cl. C30B 23/02 (2006.01); C30B 29/36 (2006.01)
CPC C30B 23/025 (2013.01) [C30B 29/36 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A seed structure for a silicon carbide crystal growth system, wherein the seed structure comprises:
a carrier layer, the carrier layer comprising silicon carbide; and
a seed layer bonded to the carrier layer with a bond, wherein the seed layer comprises crystalline silicon carbide, wherein the bond comprises an electrostatic interaction at an interface between the carrier layer and the seed layer;
wherein the seed layer provides a growth surface for growing a crystalline silicon carbide structure in a silicon carbide crystal growth process.