US 12,454,767 B2
Single crystal manufacturing apparatus
Keisuke Mihara, Nishigo-mura (JP); Kazuya Yanase, Nishigo-mura (JP); Nobuaki Mitamura, Nishigo-mura (JP); and Kiyotaka Takano, Annaka (JP)
Assigned to SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
Appl. No. 18/037,802
Filed by SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
PCT Filed Nov. 1, 2021, PCT No. PCT/JP2021/040259
§ 371(c)(1), (2) Date May 19, 2023,
PCT Pub. No. WO2022/123957, PCT Pub. Date Jun. 16, 2022.
Claims priority of application No. 2020-205263 (JP), filed on Dec. 10, 2020; and application No. 2020-205275 (JP), filed on Dec. 10, 2020.
Prior Publication US 2024/0003046 A1, Jan. 4, 2024
Int. Cl. C30B 15/14 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01)
CPC C30B 15/14 (2013.01) [C30B 15/10 (2013.01); C30B 29/06 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A single crystal manufacturing apparatus for growing a single crystal by using a Czochralski method, the apparatus comprising:
a main chamber comprising a ceiling portion, and housing a crucible for containing a silicon melt;
a pulling chamber provided continuously at an upper portion of the ceiling portion of the main chamber via a gate valve, and configured to contain a silicon single crystal to be pulled up from the silicon melt;
a thermal shield member provided so as to face the silicon melt contained in the crucible;
a rectifying cylinder provided on the thermal shield member so as to enclose the silicon single crystal being pulled up;
a cooling cylinder provided so as to encircle the silicon single crystal being pulled up, comprising an extending portion extending from the ceiling portion of the main chamber toward the silicon melt, and configured to be forcibly cooled by a cooling medium; and
a cooling auxiliary cylinder fitted to inside of the cooling cylinder,
wherein the extending portion of the cooling cylinder includes a bottom surface facing the silicon melt, and
wherein the cooling auxiliary cylinder includes at least a first portion surrounding the bottom surface of the cooling cylinder and a second portion surrounding an upper end portion of the rectifying cylinder.