| CPC C23C 18/1216 (2013.01) [C23C 18/1283 (2013.01); C23C 18/1295 (2013.01); H10F 10/174 (2025.01); H10F 71/1215 (2025.01); H10F 71/138 (2025.01)] | 19 Claims |

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1. A method of forming a metal oxide layer comprising:
forming a parent metal oxide layer on a substrate structure;
changing the parent metal oxide layer into a cation-exchanged metal oxide layer through a cation exchange reaction between cations in the parent metal oxide layer and cations in a reaction solution by contacting the parent metal oxide layer with the reaction solution; and
performing a heat treatment process on the cation-exchanged metal oxide layer,
wherein the parent metal oxide layer includes a first binary metal oxide, and the cation-exchanged metal oxide layer includes a second binary metal oxide different from the first binary metal oxide.
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