US 12,454,757 B2
Heat treatment apparatus, control method, and storage medium
Morihito Inagaki, Yamanashi (JP); Takuya Higuchi, Iwate (JP); and Hideomi Hane, Yamanashi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Dec. 2, 2022, as Appl. No. 18/073,798.
Claims priority of application No. 2021-198044 (JP), filed on Dec. 6, 2021.
Prior Publication US 2023/0175137 A1, Jun. 8, 2023
Int. Cl. C23C 16/52 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/48 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01)
CPC C23C 16/52 (2013.01) [C23C 16/45544 (2013.01); C23C 16/4584 (2013.01); C23C 16/46 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); C23C 16/482 (2013.01); C23C 16/50 (2013.01); H01J 37/321 (2013.01); H01J 37/32522 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A heat treatment apparatus comprising:
a processing container configured to accommodate a processing target;
a stage configured to dispose the processing target in the processing container;
a heater configured to heat the stage based on a temperature of a heat treatment according to a process condition; and
a controller configured to control an overall operation of the heat treatment apparatus,
wherein the controller includes:
a heat treatment control circuitry configured to control the heat treatment performed on the processing target accommodated in the processing container, according to the process condition,
a cleaning control circuitry configured to control a cleaning process on deposits adhering to the processing container due to the heat treatment,
a cumulative film thickness specification circuitry configured to specify a value of a cumulative film thickness of the deposits adhering to the processing container, based on the process condition for the heat treatment, and
a temperature correction circuitry configured to select, from a plurality of temperature correction tables for each of a plurality of execution frequencies of the cleaning process, a temperature correction table corresponding to an execution frequency of the cleaning process, and correct the temperature of the heat treatment based on a temperature correction amount corresponding to the value of the cumulative film thickness with reference to the temperature correction table, each of the plurality of temperature correction tables representing an association between the value of the cumulative film thickness and the temperature correction amount,
wherein the heat treatment control circuitry is configured to control the heater based on the corrected temperature corrected by the temperature correction circuitry to perform the heat treatment on the processing target in order to form a film with a desired thickness on the processing target based on the corrected temperature.