US 12,454,756 B2
Device, system and method for plasma-enhanced chemical vapor deposition
Jens-Uwe Fuchs, Blaubeuren (DE); Mirko Tröller, Blaubeuren (DE); Ralf Reize, Blaubeuren (DE); and Roland Leichtle, Blaubeuren (DE)
Assigned to centrotherm international AG, Blaubeuren (DE)
Appl. No. 18/245,390
Filed by centrotherm international AG, Blaubeuren (DE)
PCT Filed Sep. 14, 2021, PCT No. PCT/DE2021/100759
§ 371(c)(1), (2) Date Mar. 15, 2023,
PCT Pub. No. WO2022/057978, PCT Pub. Date Mar. 24, 2022.
Claims priority of application No. 10 2020 124 030.9 (DE), filed on Sep. 15, 2020.
Prior Publication US 2023/0349046 A1, Nov. 2, 2023
Int. Cl. C23C 16/458 (2006.01); C23C 16/509 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01)
CPC C23C 16/4586 (2013.01) [C23C 16/509 (2013.01); C23C 16/5096 (2013.01); C23C 16/52 (2013.01); H01J 37/3244 (2013.01); H01J 37/32522 (2013.01); H01L 21/67109 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A device for plasma-enhanced chemical vapor deposition, the device comprising:
a process chamber;
a switching unit configured to selectively connect at least one workpiece carrier received in said process chamber to at least one heating voltage source or a plasma voltage source, and to selectively integrate said at least one workpiece carrier, via a power connection, for operation:
as a plasma unit into a single plasma circuit for conducting high-frequency alternating current, or
as a heating unit into at least two heating circuits for conducting low-frequency alternating current, such that said process chamber is heatable using said at least one workpiece carrier received in said process chamber.