US 12,454,754 B2
Atomic layer deposition reactor comprising a top-loading reaction chamber configured to carry a batch of vertically oriented substrates
Sven Lindfors, Espoo (FI)
Assigned to Picosun Oy, Espoo (FI)
Filed by Picosun Oy, Espoo (FI)
Filed on Jun. 15, 2018, as Appl. No. 16/009,799.
Application 16/009,799 is a continuation of application No. 12/154,879, filed on May 27, 2008, granted, now 10,041,169.
Prior Publication US 2018/0305813 A1, Oct. 25, 2018
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 35/00 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C30B 25/16 (2006.01); C30B 29/20 (2006.01)
CPC C23C 16/403 (2013.01) [C23C 16/45504 (2013.01); C23C 16/45546 (2013.01); C30B 25/165 (2013.01); C30B 29/20 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An atomic layer deposition reactor, comprising:
a reaction chamber lid;
a top-load reaction chamber with a reaction space configured to receive a substrate holder, configured to carry a batch of vertical substrates placed next to each other in a parallel manner; and
at least one in-feed line, configured for feeding precursor vapor into the reaction space,
wherein the atomic layer deposition reactor is configured for depositing material simultaneously on all substrate surfaces by establishing a vertical top-to-bottom flow of precursor vapor through the entire reaction space such that the precursor vapor flows between said vertical substrates along each surface of each vertical substrate in essentially the same vertical, top-to-bottom direction,
wherein the reaction chamber lid comprises attachment parts configured to releasably suspend the substrate holder from the reaction chamber lid.