US 12,454,753 B2
Compositions and methods using same for deposition of silicon-containing film
Jianheng Li, Tempe, AZ (US); Xinjian Lei, Tempe, AZ (US); Robert G. Ridgeway, Tempe, AZ (US); Raymond N. Vrtis, Tempe, AZ (US); Manchao Xiao, Tempe, AZ (US); and Richard Ho, Tempe, AZ (US)
Assigned to Versum Materials US, LLC, Tempe, AZ (US)
Filed by Versum Materials US, LLC, Tempe, AZ (US)
Filed on Oct. 30, 2020, as Appl. No. 17/085,793.
Application 17/085,793 is a division of application No. 16/062,935, filed on Jun. 15, 2018, abandoned.
Prior Publication US 2021/0140040 A1, May 13, 2021
Int. Cl. C23C 16/34 (2006.01); C07F 7/10 (2006.01); C07F 7/18 (2006.01); C23C 16/04 (2006.01); C23C 16/36 (2006.01); C23C 16/40 (2006.01); C23C 16/50 (2006.01)
CPC C23C 16/345 (2013.01) [C07F 7/10 (2013.01); C07F 7/1804 (2013.01); C23C 16/045 (2013.01); C23C 16/36 (2013.01); C23C 16/401 (2013.01); C23C 16/50 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for depositing a silicon oxide film in a flowable chemical vapor deposition process, the method comprising:
placing a substrate having a surface feature into a reactor which are maintained at one or more temperatures ranging from about −20° C. to about 100 and a pressure of the reactor is maintained at 100 torr or less;
introducing into the reactor a mixture comprising a nitrogen source and a cyclodisilazane compound comprising at least one Si-H bond and having a boiling point between about 100° C. and about 200° C.;
wherein the cyclodisilazane compound comprising at least one Si—H bond and having a boiling point between about 100° C. and about 200° C. is 1,3-bis(tert-butyl)-2-methylcyclodisilazane and the 1,3-bis(tert-butyl)-2-methylcyclodisilazane reacts with the nitrogen source to form a nitride containing film on at least a portion of the surface feature at a temperature of about 40° C. or less;
treating the substrate with an oxygen source at one or more temperatures ranging from about 100° C. to about 1000° C. to form the silicon oxide film on at least a portion of the surface feature to provide the film; and
wherein the deposition process is a plasma enhanced chemical vapor deposition process and the plasma is generated remotely.