US 12,454,752 B2
Method and apparatus for forming a patterned structure on a substrate
Shaoren Deng, Ghent (BE); David Kurt de Roest, Leuven (BE); Vincent Vandalon, Heverlee (BE); Anirudhan Chandrasekaran, Scottsdale, AZ (US); Yonggyu Han, Leuven (BE); and Marko Tuominen, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding, B.V., Almere (NL)
Filed on Jan. 12, 2023, as Appl. No. 18/153,575.
Claims priority of provisional application 63/299,493, filed on Jan. 14, 2022.
Prior Publication US 2023/0227965 A1, Jul. 20, 2023
Int. Cl. C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/513 (2006.01); C23C 16/56 (2006.01); H01L 21/033 (2006.01)
CPC C23C 16/042 (2013.01) [C23C 16/0227 (2013.01); C23C 16/0272 (2013.01); C23C 16/04 (2013.01); C23C 16/30 (2013.01); C23C 16/45523 (2013.01); C23C 16/513 (2013.01); C23C 16/56 (2013.01); H01L 21/0337 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of reversing patterning tone of a patterned substrate, the method comprising
providing the substrate comprising a patterned hard mask into a reaction chamber, wherein a surface of the patterned hard mask comprises a first material and the hard mask is formed on the substrate comprising a second material;
selectively depositing a conformal passivation layer on the first material relative to the second material to cover the patterned hard mask;
selectively depositing an etch-stop layer on the second material relative to the passivation layer; and
selectively etching areas of the substrate not covered by the etch-stop layer.