US 12,454,751 B2
Atomic layer deposition on optical structures
Jinrui Guo, San Jose, CA (US); Ludovic Godet, Sunnyvale, CA (US); and Rutger Meyer Timmerman Thijssen, Sunnyvale, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 9, 2023, as Appl. No. 18/119,506.
Application 18/119,506 is a continuation of application No. 17/184,085, filed on Feb. 24, 2021, granted, now 11,629,402.
Application 17/184,085 is a continuation in part of application No. 16/795,232, filed on Feb. 19, 2020, granted, now 11,572,619, issued on Feb. 7, 2023.
Claims priority of provisional application 62/865,001, filed on Jun. 21, 2019.
Claims priority of provisional application 62/834,832, filed on Apr. 16, 2019.
Prior Publication US 2023/0212739 A1, Jul. 6, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/42 (2006.01); C23C 16/04 (2006.01); C23C 16/24 (2006.01); C23C 16/30 (2006.01); C23C 16/32 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/042 (2013.01) [C23C 16/24 (2013.01); C23C 16/308 (2013.01); C23C 16/32 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/405 (2013.01); C23C 16/45529 (2013.01); C23C 16/45544 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for processing an optical workpiece, comprising:
positioning a substrate containing a first layer comprising a carbide within a processing chamber, wherein the first layer comprises grating structures separated by trenches formed in the first layer, wherein the grating structures comprise a first group of the grating structures having a desired critical dimension and a second group of the grating structures having an initial critical dimension, and wherein the desired critical dimension is greater than the initial critical dimension;
applying a mask on the first layer, wherein the mask covers the first group of the grating structures and leaves exposed the second group of the grating structures; and
depositing a second layer on the mask and at least the sidewalls of the second group of the grating structures by vapor deposition to produce corrected grating structures separated by the trenches in the second group, wherein each of the corrected grating structures has a corrected critical dimension greater than the initial critical dimension.