US 12,454,491 B2
Nitride piezoelectric body and MEMS device using same
Sri Ayu Anggraini, Tosu (JP); Morito Akiyama, Tosu (JP); Masato Uehara, Tosu (JP); Hiroshi Yamada, Tosu (JP); and Kenji Hirata, Tosu (JP)
Assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo (JP)
Appl. No. 17/634,224
Filed by NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo (JP)
PCT Filed Jun. 4, 2020, PCT No. PCT/JP2020/022048
§ 371(c)(1), (2) Date Feb. 9, 2022,
PCT Pub. No. WO2021/044683, PCT Pub. Date Mar. 11, 2021.
Claims priority of application No. 2019-159305 (JP), filed on Sep. 2, 2019.
Prior Publication US 2022/0274886 A1, Sep. 1, 2022
Int. Cl. C04B 35/581 (2006.01); H10N 30/00 (2023.01); H10N 30/20 (2023.01); H10N 30/30 (2023.01)
CPC C04B 35/581 (2013.01) [H10N 30/20 (2023.02); H10N 30/708 (2024.05); C04B 2235/40 (2013.01); H10N 30/30 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A nitride material represented by a chemical formula Al1-X-YMgXTaYN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1,
and Ta includes tetravalent tantalum, and
the tetravalent Ta is contained in a largest amount compared to that of Ta having a valence other than the tetravalent Ta.