US 12,454,455 B2
Semiconductor structure and method of making
Hsi-Cheng Hsu, Taichung (TW); Chen-Wei Chiang, Hsinchu (TW); Jui-Chun Weng, Taipei (TW); Hsin-Yu Chen, Hsinchu (TW); and Chia Yu Lin, Taoyuan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on Aug. 9, 2022, as Appl. No. 17/884,106.
Prior Publication US 2024/0051818 A1, Feb. 15, 2024
Int. Cl. B81B 7/02 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01)
CPC B81B 7/02 (2013.01) [B81C 1/00269 (2013.01); B81B 2201/0264 (2013.01); B81C 2203/0109 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor layer;
a micro-electromechanical systems (MEMS) structure defined in the semiconductor layer;
a bond ring over the semiconductor layer; and
a cap structure over the MEMS structure and bonded to the bond ring, wherein:
the MEMS structure has an upper surface;
the cap structure has a lower surface facing the upper surface of the MEMS structure; and
dimples of eutectic material are on the upper surface of the MEMS structure.