US 12,453,989 B2
Apparatus for cleaning a back side of a substrate and method of cleaning a back side of a substrate
Sunghun Eom, Cheonan-si (KR); Kangsul Kim, Cheonan-si (KR); Youngjun Son, Cheonan-si (KR); and Seongyeol Choi, Cheonan-si (KR)
Assigned to SEMES CO., LTD., Chungcheongnam-do (KR)
Filed by SEMES CO., LTD., Cheonan-si (KR)
Filed on Jun. 2, 2023, as Appl. No. 18/328,203.
Claims priority of application No. 10-2022-0076431 (KR), filed on Jun. 22, 2022.
Prior Publication US 2023/0415207 A1, Dec. 28, 2023
Int. Cl. B08B 3/12 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC B08B 3/12 (2013.01) [H01L 21/02052 (2013.01); H01L 21/67057 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An apparatus for cleaning a back side of a substrate comprising:
at least one cleaning assembly, the at least one cleaning assembly comprising:
a cleaning solution supply part configured to receive a cleaning solution; and
an ultrasonic wave supply part configured to supply an ultrasonic wave to the cleaning solution such that a column of the cleaning solution is formed from the cleaning solution supply part toward the back side of the substrate,
wherein the back side of the substrate is configured to be cleaned by contacting the column of the cleaning solution with the back side of the substrate,
the column of the cleaning solution is configured to contact the back side of the substrate without spraying or applying high pressure to form the column of the cleaning solution,
the at least one cleaning assembly comprises a first cleaning assembly and a second cleaning assembly symmetrically disposed under the substrate,
the first cleaning assembly includes
a first ultrasonic wave supply part configured to generate a first ultrasonic wave having a first frequency to remove impurities having a first size from the back side of the substrate, and
the second cleaning assembly includes a second ultrasonic wave supply part configured to generate a second ultrasonic wave having a second frequency to remove impurities having a second size smaller than the first size from the back side of the substrate,
the first frequency is greater than or equal to 200 KHz and less than or equal to 400 KHz, and
the second frequency is greater than or equal to 0.4 MHz and less than or equal to 1.2 MHz.