US 12,127,490 B2
Gunn diode and method of manufacturing the same
Oktay Yilmazoglu, Roßdorf (DE); and Ahid S. Hajo, Darmstadt (DE)
Assigned to Technische Universität Darmstadt, Darmstadt (DE)
Appl. No. 17/762,775
Filed by Technische Universität Darmstadt, Darmstadt (DE)
PCT Filed Sep. 24, 2020, PCT No. PCT/EP2020/076715
§ 371(c)(1), (2) Date Mar. 23, 2022,
PCT Pub. No. WO2021/058645, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 10 2019 125 847.2 (DE), filed on Sep. 25, 2019.
Prior Publication US 2022/0344587 A1, Oct. 27, 2022
Int. Cl. H10N 80/10 (2023.01); H10N 80/00 (2023.01)
CPC H10N 80/107 (2023.02) [H10N 80/01 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A Gunn diode, comprising:
a first contact layer and a second contact layer;
an active layer based on a semiconductor material with gallium nitride or aluminum indium gallium nitride (AlInGaN) having a base surface, a front surface opposite the base surface, and a side surface non-parallel thereto, wherein the second contact layer forms an electrical contact for the base surface; and
an intermediate passivation between the front surface and the first contact layer,
wherein the first contact layer electrically contacts the side surface to form a side contact,
wherein an electric field forms upon application of an electric voltage between the first contact layer and the second contact layer, and
wherein the electric field has a maximum electric field strength at the side contact.