US 12,127,485 B2
Switching element and method for manufacturing same
Naoki Banno, Tsukuba (JP); Munehiro Tada, Tsukuba (JP); Hideaki Numata, Tsukuba (JP); and Koichiro Okamoto, Tsukuba (JP)
Assigned to NANOBRIDGE SEMICONDUCTOR, INC., Tsukuba (JP)
Appl. No. 17/421,418
Filed by NANOBRIDGE SEMICONDUCTOR, INC., Tsukuba (JP)
PCT Filed Jan. 7, 2020, PCT No. PCT/JP2020/000129
§ 371(c)(1), (2) Date Jul. 8, 2021,
PCT Pub. No. WO2020/145253, PCT Pub. Date Jul. 16, 2020.
Claims priority of application No. 2019-001355 (JP), filed on Jan. 8, 2019.
Prior Publication US 2022/0123210 A1, Apr. 21, 2022
Int. Cl. H01L 27/24 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/023 (2023.02) [H10B 63/30 (2023.02); H10N 70/063 (2023.02); H10N 70/8416 (2023.02); H10N 70/883 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A switching element comprising:
a first insulation layer at which a first wire, that has copper as a main component, is embedded in a first wiring groove that opens upward;
a second insulation layer that is formed at upper surfaces of the first insulation layer and the first wire, and in which is formed an opening that extends to the first insulation layer and the first wire;
a first electrode that is a portion, which is exposed from the opening, of the first wire;
an oxygen supply layer that is formed at an upper surface of the second insulation layer, that generates oxygen plasma at a time of etching that forms the opening in the second insulation layer, and that remains at, of the upper surface of the second insulation layer, at least a periphery of the opening;
an ion conducting layer that is formed at upper surfaces of the first insulation layer and the first electrode which are exposed from the opening, and at inner side surfaces of the opening of the second insulation layer, and at an upper surface of the oxygen supply layer; and
a second electrode that is formed at an upper surface of the ion conducting layer;
wherein the oxygen supply layer extends at regions below sides of end portions of the ion conducting layer, and
wherein a portion, which is at a region below the ion conducting layer, of the oxygen supply layer is thicker than portions, which extend at the regions below the sides of the end portions of the ion conducting layer, of the oxygen supply layer.