US 12,127,414 B2
Semiconductor device and method for fabricating the same
Da-Jun Lin, Kaohsiung (TW); Yi-An Shih, Changhua County (TW); Bin-Siang Tsai, Changhua County (TW); and Fu-Yu Tsai, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jun. 13, 2023, as Appl. No. 18/209,469.
Application 18/209,469 is a division of application No. 17/106,214, filed on Nov. 30, 2020, granted, now 11,723,215.
Claims priority of application No. 202011203268.7 (CN), filed on Nov. 2, 2020.
Prior Publication US 2023/0329003 A1, Oct. 12, 2023
Int. Cl. H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/00 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
forming a magnetic tunneling junction (MTJ) on a substrate;
forming a top electrode on the MTJ;
forming a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ;
forming a landing layer on the first IMD layer and a sidewall of the first IMD layer; and
patterning the landing layer to form a landing pad on the top electrode and the first IMD layer.