US 12,127,412 B2
Semiconductor memory devices with common source lines and methods of manufacturing the same
Meng-Han Lin, Hsinchu (TW); and Chia-En Huang, Xinfeng Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 27, 2022, as Appl. No. 17/586,092.
Claims priority of provisional application 63/233,078, filed on Aug. 13, 2021.
Prior Publication US 2023/0048842 A1, Feb. 16, 2023
Int. Cl. H10B 53/30 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01); H10B 53/20 (2023.01)
CPC H10B 53/30 (2023.02) [H10B 51/20 (2023.02); H10B 51/30 (2023.02); H10B 53/20 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first concentric structure extending along a vertical direction and wrapping around a first conductor structure;
a second concentric structure extending along the vertical direction and wrapping around a second conductor structure;
a third conductor structure extending along the vertical direction, wherein the third conductor structure is interposed between and spaced from the first and second concentric structures along a first lateral direction; and
a fourth conductor structure extending along the first lateral direction;
wherein the fourth conductor structure at least partially wraps around each of the first concentric structure, the third conductor structure, and the second concentric structure.