US 12,126,923 B2
Solid-state imaging device and electronic apparatus for miniaturization of pixels and improving light detection sensitivity
Shinpei Fukuoka, Nagasaki (JP); Hideaki Togashi, Nagasaki (JP); Yoshihiro Ando, Nagasaki (JP); and Masashi Nakata, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Jun. 28, 2023, as Appl. No. 18/342,791.
Application 18/342,791 is a continuation of application No. 17/930,589, filed on Sep. 8, 2022, granted, now 11,743,614.
Application 17/930,589 is a continuation of application No. 16/638,879, granted, now 11,509,846, issued on Nov. 22, 2022, previously published as PCT/JP2018/019650, filed on May 22, 2018.
Claims priority of application No. 2017-159231 (JP), filed on Aug. 22, 2017.
Prior Publication US 2023/0362508 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H04N 5/335 (2011.01); H04N 25/704 (2023.01); H04N 25/77 (2023.01); H10K 19/20 (2023.01); H10K 39/32 (2023.01); H01L 27/146 (2006.01)
CPC H04N 25/704 (2023.01) [H04N 25/77 (2023.01); H10K 19/20 (2023.02); H10K 39/32 (2023.02); H01L 27/14647 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A solid-state imaging device, comprising:
a substrate that comprises a pixel array unit sectioned into a matrix, wherein the pixel array unit comprises a plurality of sections; and
a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the plurality of phase difference detection pixels, wherein
each section of the plurality of sections includes one of a normal pixel of the plurality of normal pixels, a phase difference detection pixel of the plurality of phase difference detection pixels, or an adjacent pixel of the plurality of adjacent pixels,
each of the normal pixel, the phase difference detection pixel, and the adjacent pixel includes an upper electrode, a lower electrode, and a photoelectric conversion film,
the lower electrode of the phase difference detection pixel has a triangular shape when viewed from above the substrate,
the photoelectric conversion film is between the upper electrode and the lower electrode in a thickness direction of the photoelectric conversion film,
the lower electrode, in the normal pixel, is separate for each section of the plurality of sections in which the normal pixel is present, and
the lower electrode, in the adjacent pixel, extends from a first section of the plurality of sections in which the adjacent pixel is present to a second section of the plurality of sections in which the phase difference detection pixel adjacent to the adjacent pixel is present, when viewed from above the substrate.