CPC H03M 13/1148 (2013.01) [G11C 29/42 (2013.01); G11C 29/44 (2013.01); H03M 13/1174 (2013.01); H03M 13/1575 (2013.01); H03M 13/29 (2013.01)] | 20 Claims |
1. A method of operating a memory controller including:
a first level error correction code (ECC) circuit for generating a first level ECC;
a second level ECC circuit for generating a second level ECC;
the memory controller coupled to a memory device for sharing check bits among the first level ECC and the second level ECC, the method comprising:
generating a first level parity-check matrix associated with a first error detection scheme in the first level ECC;
transforming the first level parity-check matrix to a systematic form of the first level parity-check matrix;
generating a second level parity-check matrix associated with a first error correction scheme in the second level ECC;
transforming the second level parity-check matrix to a systematic form of the second level parity-check matrix;
identifying rows of the systematic form of the second level parity-check matrix that can be derived from the systematic form of the first level parity-check matrix, comprising sorting columns of the systematic form of the second level parity-check matrix to find a maximum of N rows with matching and aligned zeros; and
storing, in the memory device, check bits associated with all rows of the systematic form of the first level parity-check matrix and rows of the systematic form of the second level parity-check matrix that cannot be derived from the systematic form of the first level parity-check matrix.
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